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| PD - 91385B IRF5305 HEXFET(R) Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -55V RDS(on) = 0.06 G ID = -31A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. -31 -22 -110 110 0.71 20 280 -16 11 -5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. --- 0.50 --- Max. 1.4 --- 62 Units C/W 3/3/00 IRF5305 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -55 --- --- -2.0 8.0 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- -0.034 --- --- --- --- --- --- --- --- --- --- 14 66 39 63 4.5 7.5 1200 520 250 Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, ID = -1mA 0.06 VGS = -10V, ID = -16A -4.0 V VDS = V GS, ID = -250A --- S VDS = -25V, ID = -16A -25 VDS = -55V, VGS = 0V A -250 VDS = -44V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 63 ID = -16A 13 nC VDS = -44V 29 VGS = -10V, See Fig. 6 and 13 --- VDD = -28V --- ID = -16A ns --- RG = 6.8 --- RD = 1.6, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact --- VGS = 0V --- pF VDS = -25V --- = 1.0MHz, See Fig. 5 D S Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units --- --- --- --- --- --- --- --- 71 170 -31 A -110 -1.3 110 250 V ns nC Conditions D MOSFET symbol showing the G integral reverse p-n junction diode. S TJ = 25C, IS = -16A, VGS = 0V TJ = 25C, IF = -16A di/dt = -100A/s Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD -16A, di/dt -280A/s, VDD V(BR)DSS, TJ 175C VDD = -25V, starting TJ = 25C, L = 2.1mH RG = 25, IAS = -16A. (See Figure 12) Pulse width 300s; duty cycle 2%. 2 www.irf.com IRF5305 1000 VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOT TOM - 4.5V TO P 1000 -ID , D rain-to-S ou rc e C urre nt (A ) -ID , D rain-to-S ourc e C urrent (A ) VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V TOP 100 100 10 10 -4.5 V 2 0 s P U LS E W ID TH T c = 2 5C J A 0.1 1 10 100 -4 .5 V 20 s P U L S E W ID T H TC = 17 5C J 0.1 1 10 1 1 A 100 -VD S , D rain-to-S ourc e V oltage (V ) -VD S , D rain-to-S ource V oltage (V ) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 TJ = 2 5C TJ = 17 5 C R D S (on) , Drain-to-S ource O n Resistance (N orm alized) I D = -27 A -I D , D rain-to -So urc e C urre nt (A ) 1.5 10 1.0 0.5 1 4 5 6 7 V DS = -2 5 V 2 0 s P U L S E W ID TH 8 9 10 A 0.0 -60 -40 -20 0 20 40 60 80 V G S = -10 V 100 120 140 160 180 A -V G S , G ate -to-Source Volta ge (V ) T J , Junction T em perature (C ) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF5305 2500 2000 C iss C oss 1500 1000 -V G S , G ate -to-S ou rc e V oltage (V ) V GS C iss C rs s C o ss = = = = 0V , f = 1MHz C g s + C g d , C d s S H O R TE D C gd C ds + C g d 20 I D = -1 6A V D S = -4 4V V D S = -2 8V 16 C, C apacitanc e (pF ) 12 8 C rss 500 4 0 1 10 100 A 0 0 10 20 30 FO R TE S T C IR C U IT S E E FIG U R E 1 3 40 50 60 A -V D S , D rain-to-S ourc e V oltage (V ) Q G , Total G ate C harge (nC ) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 -IS D , R everse Drain C urrent (A ) O P E R A TIO N IN TH IS A R E A L IM ITE D B Y R D S (o n) -ID , D rain C urrent (A ) 100 100 100 s TJ = 17 5 C TJ = 25 C 10 1m s 10 0.4 0.8 1.2 1.6 V G S = 0V A 1 1 T C = 25 C T J = 17 5C S ing le P u lse 10 10m s 2.0 100 A -VS D , S ourc e-to-D rain V oltage (V ) -VD S , D rain-to-S ourc e V oltage (V ) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF5305 VDS 35 RD VGS 30 D.U.T. + -ID , Drain Current (A) 25 -10V 20 Pulse Width 1 s Duty Factor 0.1 % 15 Fig 10a. Switching Time Test Circuit td(on) tr t d(off) tf 10 VGS 5 10% 0 25 50 75 100 125 150 175 90% VDS TC , Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 P DM t1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 t2 0.1 0.05 0.02 0.01 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com - RG VDD 5 IRF5305 VDS L 700 E A S , S ingle Pulse Avalanc he E nergy (m J) RG D .U .T IA S D R IV E R 0 .0 1 TO P 600 VD D A BOTTOM 500 ID -6.6 A -11 A -1 6A -2 0 V tp 15V Fig 12a. Unclamped Inductive Test Circuit IAS tp V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG -10V QGS VG QGD VGS -3mA Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com + D.U.T. - + - 400 300 200 100 0 V D D = -2 5V 25 50 75 100 125 150 A 175 S tarting T J , J unc tion T em perature (C ) Fig 12c. Maximum Avalanche Energy Vs. Drain Current 50K 12V .2F .3F VDS IRF5305 Peak Diode Recovery dv/dt Test Circuit D.U.T + + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - + RG VGS* ** * dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test + - VDD * * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt [VDD] Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% [ ISD ] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For P-Channel HEXFETS www.irf.com 7 IRF5305 Package Outline TO-220AB Outline Dimensions are shown in millimeters (inches) 2.87 (.11 3) 2.62 (.10 3) 10 .54 (.4 15) 10 .29 (.4 05) 3 .7 8 (.149 ) 3 .5 4 (.139 ) -A 6.47 (.25 5) 6.10 (.24 0) -B 4.69 ( .18 5 ) 4.20 ( .16 5 ) 1 .32 (.05 2) 1 .22 (.04 8) 4 1 5.24 (.60 0) 1 4.84 (.58 4) 1.15 (.04 5) M IN 1 2 3 L E A D A S S IG NM E NT S 1 - GATE 2 - D R A IN 3 - S O U RC E 4 - D R A IN 1 4.09 (.55 5) 1 3.47 (.53 0) 4.06 (.16 0) 3.55 (.14 0) 3X 3X 1 .4 0 (.0 55 ) 1 .1 5 (.0 45 ) 0.93 (.03 7) 0.69 (.02 7) M BAM 3X 0.55 (.02 2) 0.46 (.01 8) 0 .3 6 (.01 4) 2.54 (.10 0) 2X N O TE S : 1 D IM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y 1 4.5M , 1 9 82. 2 C O N TR O L LIN G D IM E N S IO N : IN C H 2 .92 (.11 5) 2 .64 (.10 4) 3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO -2 20 A B . 4 H E A TS IN K & LE A D M E A S U R E M E N T S D O N O T IN C LU DE B U R R S . Part Marking Information TO-220AB E X A M P L E : TH IS IS A N IR F 1 0 1 0 W ITH A S S E M B L Y L O T C O D E 9 B 1M A IN TE R N A T IO N A L R E C TIFIE R LOGO ASSEMBLY L OT C O D E PART NU MBER IR F 1 0 10 9246 9B 1M D A TE C O D E (Y Y W W ) YY = YEAR W W = W EEK WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 221 8371 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 4/99 8 www.irf.com |
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